首页> 外文会议>Conference on High-Power Diode Laser Technology and Applications; 20080121-23; San Jose,CA(US) >cw, 325nM, 100mW semiconductor laser system as potential substitute for HeCd gas lasers
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cw, 325nM, 100mW semiconductor laser system as potential substitute for HeCd gas lasers

机译:325nM,100mW连续波半导体激光器系统可替代HeCd气体激光器

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In the last decades, diode laser systems conquered the spectral range step-by-step from conventional gas lasers, wherever they can match or outperform in optical specifications. Although highly anticipated in the ultraviolet wavelength range, for instance in high-resolution lithography, biological and medical fluorescence applications or holography, cw single frequency operation of sufficient power has been a challenge for diode or other solid state laser systems. Currently this scope is still dominated by the HeCd gas laser, emitting at 325 run with powers of up to 100 mW. In this paper we present a diode laser system emitting at 325 nm offering the same output power by efficient second harmonic generation (SHG) of a master oscillator power amplifier (MOPA) at 650 nm.For the master oscillator a ridge waveguide diode is anti-reflection coated and used in an external cavity diode laser (ECDL) with grating feedback in Littrow configuration. This setup features a MHz line width (coherence length of 100m), a coarse tuning range from 649 nm to 657 nm and a mode hope free tuning of 20 GHz. In a second step, we use a tapered amplifier to boost the output from the ECDL to a level of 400 mW, for powering an efficient second harmonic generation process in an enhancement cavity. Faraday isolators on both ends of the amplifier stage prevent back reflection and stabilize the single mode operation of the system. Together with astigmatism compensation this yields to a high spatial quality (m~2<1.5) of the amplified beam. The frequency doubling is achieved by using a four mirror bow-tie enhancement resonator fitted with a Beta-Barium Borate (BBO) crystal. The cavity length is actively locked to the laser frequency using the Pound-Drever-Hall method.With this set-up, stable and reliable laser operation is achieved. After a few minutes warm-up time, fixed frequency and tunable UV output power of more than 100 mW could be generated, opening this important wavelength range for future product development.
机译:在过去的几十年中,二极管激光系统逐步超越了常规气体激光器的光谱范围,无论它们在光学规格上可以匹配还是优于。尽管在紫外线波长范围内,例如在高分辨率光刻,生物和医学荧光应用或全息术中,人们高度期待它,但对于二极管或其他固态激光系统,足够功率的连续单频操作一直是一个挑战。目前,此范围仍由HeCd气体激光器控制,其功率高达325 mW,功率高达100 mW。在本文中,我们介绍了一种二极管激光器系统,该系统在325 nm处发射,并通过在650 nm处的主振荡器功率放大器(MOPA)产生有效的二次谐波(SHG)来提供相同的输出功率。反射涂层,并用于带有Littrow配置的光栅反馈的外腔二极管激光器(ECDL)中。该设置具有MHz线宽(相干长度为100m),从649 nm到657 nm的粗调范围以及20 GHz的无模式希望调谐。在第二步中,我们使用锥形放大器将ECDL的输出提升到400 mW的水平,以便为增强型腔中的有效二次谐波生成过程提供动力。放大器级两端的法拉第隔离器可防止背反射并稳定系统的单模运行。加上像散补偿,可以得到放大光束的高空间质量(m〜2 <1.5)。通过使用装有硼酸钡(BBO)晶体的四镜面蝴蝶结增强谐振器来实现倍频。腔体长度通过Pound-Drever-Hall方法主动锁定到激光频率,通过这种设置可以实现稳定可靠的激光操作。经过几分钟的预热时间,可以产生超过100 mW的固定频率和可调节的UV输出功率,为未来的产品开发打开了重要的波长范围。

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