首页> 外文会议>Conference on Emerging Lithographic Technologies VI Pt.2, Mar 5-7, 2002, Santa Clara, USA >Laser plasma radiation sources based on a laser-irradiated gas puff target for x-ray and EUV lithography technologies
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Laser plasma radiation sources based on a laser-irradiated gas puff target for x-ray and EUV lithography technologies

机译:基于用于X射线和EUV光刻技术的激光辐照烟气靶的激光等离子体辐射源

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摘要

In this paper laser plasma radiation sources for x-ray and EUV lithography technologies are proposed. The sources are based on a recently developed double-stream gas puff target formed by pulsed injection of high-Z gas (argon or xenon) into a hollow stream of low-Z gas (helium or hydrogen) by using the double-nozzle setup. Strong x-ray and EUV production from the laser-irradiated double-stream gas puff target has been demonstrated. Characterization measurements of the source performed using a Nd:glass laser are presented and discussed.
机译:本文提出了用于X射线和EUV光刻技术的激光等离子体辐射源。气源基于最近开发的双流气体吹气靶,该靶通过使用双喷嘴设置将高Z气体(氩气或氙气)脉冲注入低Z气体(氦气或氢气)的空心流中而形成。已经证明了用激光辐照的双流气体抽吸靶可以产生强大的X射线和EUV。介绍并讨论了使用Nd:玻璃激光器对光源进行的表征测量。

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