首页> 外文会议>Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA >Ultra-High Accuracy Measurement of the Coefficient of Thermal Expansion for Ultra-Low Expansion Materials
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Ultra-High Accuracy Measurement of the Coefficient of Thermal Expansion for Ultra-Low Expansion Materials

机译:超低膨胀材料的热膨胀系数的超高精度测量

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Microlithographic systems rely on precision alignment and a high-level of dimensional stability to meet their performance requirements. In critical applications, immunity to thermally induced dimensional changes is achieved by the use of ultra-low linear coefficient of thermal expansion (hereafter referred to as CTE and denoted by α) materials such as ULE~(~R) in components such as reflective optics and machine structures. The CTE of ULE~(~R) may be varied within limits during manufacture and is typically in the 0 +- 30 ppb K~(-1) range. A high-accuracy determination of the CTE is essential for both process control and for providing an essential input to the design of such systems for error budgeting purposes. Currently, there is a need for CTE determination with an expanded uncertainty U(α)(k=2) <1 ppb K~(-1) in the 273-373 K (0-100℃) temperature range. A survey of the state-of-the-art of high-accuracy absolute measurement of CTE is presented along with a discussion of the significant error sources in each of the current techniques. Metrology techniques, sample design and instrumentation are described along with uncertainty estimates for representative instruments. The design philosophy and prospects for a new instrument that satisfies the above mentioned need are described.
机译:微光刻系统依靠精确对准和高度的尺寸稳定性来满足其性能要求。在关键应用中,通过在反射光学器件等组件中使用诸如ULE〜(〜R)之类的超低线性热膨胀系数(以下称为CTE,用α表示),可以抵抗热引起的尺寸变化。和机器结构。 ULE_(〜R)的CTE可以在制造期间的极限内变化,并且通常在0 +-30 ppb K〜(-1)的范围内。 CTE的高精度确定对于过程控制以及为错误预算目的为此类系统的设计提供必要的输入都是至关重要的。当前,需要在273-373 K(0-100℃)温度范围内测定CTE,不确定度U(α)(k = 2)<1 ppb K〜(-1)。提出了对CTE的高精度绝对测量的最新技术的调查,并讨论了每种当前技术中的重大误差源。描述了计量技术,样品设计和仪器以及代表性仪器的不确定度估计。描述了满足上述需求的新仪器的设计理念和前景。

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