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NGL process and the role of International SEMATECH

机译:NGL流程和国际SEMATECH的作用

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International SEMATECH (ISMT) established a program in 1996 to narrow the Next Generation Lithography (NGL) options on the SIA Roadmap through a global consensus process. Methodologies developed by the SIA Lithography Technical Working Group (TWG) were adopted to ensure a balanced and objective assessment. Critical reviews with emphasis on technical program plans, solutions to critical issues (showstoppers), error budget analysis, cost-of-ownership, business plans, and schedules were implemented with the Technical Champions of each technology. White papers were written by the Technical Champion teams to better educate the participants in the annual worldwide NGL workshops. Participants made their recommendations through a survey conducted at the end of each workshop. A Task Force of the key stakeholders from global chip makers, equipment suppliers and consortia was commissioned to review the workshop output, assess the progress on the critical issues and make recommendations to ISMT on narrowing the options. As a result of this global consensus process and the critical issue projects, the NGL Task Force has made the following recommendations: 1. November 1997 ― Massively Parallel Direct Write (MPDW) is not mature enough for introduction until at least the 50nm node. 2. December 1998 ― ISMT should narrow its support to two options EUVL and EPL, and that other worldwide activity on X-Ray and IPL continue. 3. December 1999 ― ISMT should continue its support for EUVL and EPL for the 70nm node, it also recognized the growing possibility that the industry might need more than one mainstream technology for the diverging application of DRAM/MPU and ASIC/SOC. 4. September 2000 ― The industry in general should narrow its support for commercialization to EUVL and EPL for insertion at the 70nm node. 5. August 2001 ― The industry should continue to fund the commercialization of both EUVL and EPL. Today, the ISMT program for NGL is transitioning from option selection to promoting critical issues solutions and commercial infrastructure for EUVL with initial focus on mask blanks. ISMT is also pursuing collaboration with the suppliers and consortia developing EPL technology to provide stable stencil mask for contact layers. This paper describes the evolution of the program, results of the year 2001 activities, and the plans for 2002.
机译:国际SEMATECH(ISMT)于1996年建立了一个计划,以通过全球共识程序来缩小SIA路线图上的下一代光刻(NGL)选项。采用了SIA光刻技术工作组(TWG)制定的方法,以确保进行平衡和客观的评估。与每种技术的技术支持者一起实施了以技术计划计划,关键问题的解决方案(关键问题),错误预算分析,拥有成本,业务计划和进度表为重点的严格审查。技术冠军团队编写了白皮书,以更好地教育年度NGL全球研讨会的参与者。参加者通过在每个研讨会结束时进行的调查提出了建议。来自全球芯片制造商,设备供应商和财团的主要利益相关者组成的工作组受命审查研讨会的成果,评估关键问题的进展并就缩小选择范围向ISMT提出建议。作为全球共识过程和关键问题项目的结果,NGL工作队提出了以下建议:1. 1997年11月-大规模并行直接写(MPDW)至少在50nm节点之前还不够成熟,无法引入。 1998年12月2日-ISMT应该将支持范围缩小到EUVL和EPL两个选项,并且继续在X-Ray和IPL上进行其他全球活动。 1999年12月3日-ISMT应该继续支持70nm节点的EUVL和EPL,它也认识到该行业可能需要不止一种主流技术来实现DRAM / MPU和ASIC / SOC的多样化应用的可能性在不断增长。 2000年9月4日-整个行业应该将其对商业化的支持范围缩小到EUVL和EPL,以插入70nm节点。 2001年8月5日-业界应继续资助EUVL和EPL的商业化。如今,NGL的ISMT计划正在从选项选择过渡到推广EUVL的关键问题解决方案和商业基础架构,最初的重点是掩模空白。 ISMT还寻求与供应商和财团合作开发EPL技术,以为接触层提供稳定的模板掩模。本文描述了该计划的演变,2001年活动的结果以及2002年的计划。

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