首页> 外文会议>Conference on Electrical Insulation amp; Dielectric Phenomena - Annual Report 1973 >Dielectric breakdown on LiF cleavage surfaces in compressed N2 gas
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Dielectric breakdown on LiF cleavage surfaces in compressed N2 gas

机译:压缩氮气中LiF裂解表面的介电击穿

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This paper presents a study of electrical breakdown effects on LiF cleavage surfaces situated in compressed nitrogen gas. The object of interest is the (100) dendrite. As first reported by Gilman and stauff,1 this dendrite forms extensive surface patterns on the cleavage face of LiF crystals situated in dielectric liquids when subjected to dc positive (dominant pattern) and negative breakdown voltage. Its classification as a dislocation feature was not accepted by workers at NRL2 who found it to be grooved and channeled. However, since dislocation spike structures, known as screw pairs, were found about some dielectric breakdown paths, 3 the question of primacy was not resolved. According to the basic observations and ideas of von Hippel, 4 substantiated by the work of Cooper and Elliott5 and of Davisson, 6 and treated theoretically by Offenbacher and Callen, 7 the dielectric breakdown path is produced by the disruptive action of oriented electron avalanches which results initially in the formation of dislocation-free, plasma-containing, grooves and channels. The orientation is due to the Brillouin zone structure of the normal modes of lattice vibration. Gilman and stauff1 have proposed that dielectric breakdown is preceded by a discontinuous nucleation of dislocation loops.
机译:本文介绍了电击穿对位于压缩氮气中的LiF裂解表面的影响的研究。感兴趣的对象是(100)树突。如Gilman和stauff首次报道,[1]当受到直流正电压(主要模式)和负击穿电压时,该枝晶在介电液体中的LiF晶体的分裂面上形成大量的表面图案。 NRL2的工人不认为它是脱位特征,因为发现它带有沟槽和沟渠。但是,由于在一些介电击穿路径中发现了位错尖峰结构(称为螺丝对),因此无法解决首要性问题。根据von Hippel的基本观察和思想,4由Cooper和Elliott5以及Davisson的工作证实6,并由Offenbacher和Callen 7理论处理,介电击穿路径是由定向电子雪崩的破坏作用产生的,其结果是最初是形成无位错,含等离子体的凹槽和通道。取向是由于晶格振动的正常模式的布里渊区结构引起的。 Gilman和stauff1提出介电击穿之前是位错环的不连续成核。

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