Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers

摘要

We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H_2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.