首页> 外文会议>Computers and Communications, 2005. ISCC 2005. >A 3V to 6V in, 6A out synchronous buck PWM integrated FET switcher design uses state-of-art power IC technology
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A 3V to 6V in, 6A out synchronous buck PWM integrated FET switcher design uses state-of-art power IC technology

机译:3V至6V输入,6A输出同步降压PWM集成FET开关设计采用了先进的电源IC技术

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摘要

A 3V to 6V input, 6A output synchronous buck PWM switcher with integrated FETs; TI code name SWIFT™ has been fabricated using a combination of past reported power IC technology. In this IC we extended a production 0.72μm technology with enhanced features and then combined mixed circuit design with integrated thin-gate oxide, planar, very-thin-resurf VTR LDMOS FETs. The Power IC uses plated CuNiPd top metal for low resistance busing and bonding over active area and is packaged in a thin line 28 pin TSSOP package having a POWERPAD™. The technology combination yields a state-of-art performance power IC. The device is capable of 95% efficiency and is excellent for point-of-load applications such as DSP solutions as well as high density distributed power systems. The key to high efficiency in this product is dual low Ron=30 mΩ fets, low gate charge losses, and low reverse recovery losses during power FET switching.
机译:具有集成FET的3V至6V输入,6A输出同步降压PWM开关; TI的代号SWIFT™是结合过去报告的功率IC技术制成的。在此IC中,我们扩展了具有增强功能的0.72μm生产技术,然后将混合电路设计与集成的薄栅极氧化物,平面,超薄表面的VTR LDMOS FET结合在一起。功率IC使用电镀的CuNiPd顶层金属在有源区域上进行低电阻汇流和粘合,并封装在具有POWERPAD™的细线28引脚TSSOP封装中。该技术组合产生了最先进的性能功率IC。该器件的效率高达95%,非常适合于负载点应用,例如DSP解决方案以及高密度分布式电源系统。该产品中高效率的关键是双低Ron = 30mΩfet,低栅极电荷损耗以及低功率FET切换期间的反向恢复损耗。

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