A Bulk Built-in Current Sensor for SET detection with dynamic memory cell

摘要

This paper introduces a Bulk Built-in Current Sensor (Bulk-BICS) circuit for detecting the transient current induced by a radioactive particle striking a CMOS integrated circuit. Previous solutions are discussed and some issues are presented. A new topology for the memory cell is introduced, along with the simulation results of extracted circuits already laid out in a 130 nm technology.