【24h】

Dry Friction Behavior of Reaction-Bonded Silicon Carbide at High Temperature

机译:反应结合碳化硅的高温干摩擦行为

获取原文
获取原文并翻译 | 示例

摘要

The dry friction behaviors of reaction-bonded silicon carbide (RB-SiC) with different particle sizes were studied at high temperature using pin-on-dick friction testing method. The results showed that the friction coefficient of RB-SiC was the highest at 300℃, and lower at room temperature and 600℃, but the wear rate of RB-SiC would be increased with the increase of temperature. The XRD analysis of grits showed that there was only the amorphous silica in grits at room temperature, whereas the amorphous and crystal silica combined in grits tested at 600 ℃. The wear mechanisms of RB-SiC at room temperature and elevated temperature were analyzed by of scanning electron microscopy (SEM) observation on wom surface morphology of RB-SiC.
机译:采用针对滴摩擦试验方法,研究了不同粒径的反应结合碳化硅(RB-SiC)的干摩擦行为。结果表明,RB-SiC的摩擦系数在300℃时最高,在室温和600℃时较低,但是随着温度的升高,RB-SiC的磨损率会增加。粗粉的X射线衍射分析表明,在室温下,粗粉中仅存在无定形二氧化硅,而粗粉和无定形二氧化硅在600℃下混合。通过扫描电子显微镜(SEM)观察RB-SiC的表面形态,分析了RB-SiC在室温和高温下的磨损机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号