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Fabrication of BN-AlN-TiB_2 Compound Conductive Ceramics by Self-Propagating High Temperature Synthesis and Hot Isostatic Pressing

机译:自蔓延高温合成和热等静压法制备BN-AlN-TiB_2复合导电陶瓷

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摘要

BN-AlN-TiB_2 compound conductive ceramics from powder mixtures of BN, Al, and TiB_2 was fabricated by self-propagating high temperature synthesis (SHS) and hot isostatic pressing (HIP). The powder mixtures were shaped by isostatic cool pressing at 5-10MPa and the combustion reaction was carried at 100-200 MPa N_2 by an ignitor. XRD experiments confirmed that the reaction was complete and only A1N, BN and TiB_2 were detected. Optical microscopy as well as SEM with an electron probe microanalysis was used for microstructural analysis and revealed a relatively uniform distribution of particulates. The temperature-dependence and composition-dependence of the electrical resistivity of BN-AlN-TiB_2 ceramics were studied. The results showed that the optimum composition was 5-10wt% BN, 30-55wt% Al and 60-40wt% TiB_2, and the products had the density of 90% of the theoretical, resistivity of 80-1000 μΩ·cm and bending strength of 100-200 MPa.
机译:通过自蔓延高温合成(SHS)和热等静压(HIP),从BN,Al和TiB_2的粉末混合物中制备BN-AlN-TiB_2复合导电陶瓷。通过在5-10MPa下的等静压冷压使粉末混合物成形,并通过点火器在100-200MPa N_2下进行燃烧反应。 XRD实验证实反应完全,仅检测到AlN,BN和TiB_2。光学显微镜以及带有电子探针显微分析的SEM被用于微观结构分析,并显示出相对均匀的颗粒分布。研究了BN-AlN-TiB_2陶瓷电阻率的温度依赖性和成分依赖性。结果表明,最佳组成为BN 5-10wt%,Al 30-55wt%和TiB_2 60-40wt%,产物的密度为理论值的90%,电阻率为80-1000μΩ·cm,弯曲强度为100-200 MPa。

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