Nanocrystal Non-Volatile Memories: Simulation, Fabrication and Characteristics

摘要

Recently, non-volatile memory (NVM) devices utilizing discrete nanocrystals (nc) as floating gate have received considerable research interests due to their excellent memory performance and high scalability. In this paper, we will present an overview of this type of memory devices investigated in our laboratory. Key issues involving nanocrystal selection, fabrication and tunnelling barrier engineering are discussed. It is found that non-volatile memory devices utilizing nanocrystals show promising characteristics as candidates for the next generation memories, especially when metal nanocrystals and high-κ tunnelling dielectrics are adopted.