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Impact of Donor Dopant on Acceptor Solubility in TIBr

机译:施主掺杂对TIBr中受体溶解度的影响

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摘要

The predicted dependence of TIBr room temperature ionic conductivity on divalent donor and acceptor dopant concentration is presented, taking into account acceptor dopant exsolution and dopant-defect association. Donor-acceptor compensation is found to play a key role in determining the ultimate room temperature conductivity with donors increasing the solubility of acceptors from 0.04 ppm (0 donor) to 0.84 ppm (1 ppm donor) to 8.4 ppm (10 ppm donor).
机译:考虑到受体掺杂物的析出和掺杂物与缺陷的结合,给出了TIBr室温离子电导率对二价施主和受主掺杂物浓度的预测依赖性。发现施主-受主补偿在确定最终室温电导率中起着关键作用,施主将受主的溶解度从0.04 ppm(0个施主)增加到0.84 ppm(1 ppm供体)到8.4 ppm(10 ppm供体)。

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  • 来源
  • 会议地点 Honolulu HI(US)
  • 作者

    S. R. Bishop; H. L. Tuller;

  • 作者单位

    Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA,International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, Nishi-ku Fukuoka, 819-0395, Japan;

    Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-26 14:19:49

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