Simple Scalable Fabrication Method of Wide-angle Black Silicon Surface for Energy Harvesting Applications

摘要

In this study, we report an easy and cheap fabrication technique of wide band omnidirectional antireflective black silicon surface based on porous and non-porous silicon nanowires (SINWs). This technique depends on one step silver electroless catalytic etching method (EMACE) in an aqueous solution of AgNO_3 and HF. We found a commensurate relationship between the dimensions and the etching time. The fabrication technique was examined for large scale production potential. Wide band and angle near zero reflection is reported in the visible region due to the strong trapping and antireflection properties. Quantum size effect and phonon scattering is confirmed for the fabricated structure through Raman measurement. Black silicon based on porous and non-porous SINWs shows promising potential for photovoltaic, optoelectronic and energy storage applications.