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Chalcogenide optical waveguides with extremely high stimulated Brillouin scattering gain for integrated devices

机译:集成器件具有极高受激布里渊散射增益的硫属化物光波导

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This paper reports on the fabrication details and performance of chalcogenide waveguides consisted of a ridge geometry 2.2-2.6μm wide on a silica substrate with different film thickness (550-950nm) and etching depth (30-50%). A silica cladding layer was also used to improve acoustic confinement compared to previous designs using polymer claddings. Spiral waveguides formed on a 2cm wide chip, with up to 24cm long spirals used in the experiments. The propagation loss of these waveguides were around 0.2dB/cm. Highest on-chip SBS gain of up to 47dB in this As
机译:本文报道了硫族化物波导的制造细节和性能,该硫族化物波导由在不同厚度的膜厚度(550-950nm)和蚀刻深度(30-50%)的二氧化硅衬底上宽2.2-2.6μm的脊几何形状组成。与先前使用聚合物覆层的设计相比,二氧化硅覆层也可用于改善声学限制。螺旋形波导形成在一个2cm宽的芯片上,实验中使用的螺旋形长达24cm。这些波导的传播损耗约为0.2dB / cm。 As中最高的片上SBS增益高达47dB

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