Study of Y_2O_3 thin film prepared by plasma enhanced atomic layer deposition

摘要

Y_2O_3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp_3)_3Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175℃ to 325℃. The crystallinity and density of Y_2O_3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y_2O_3 thin films are in range of 15～17 calculated by capacitance - voltage characteristics.