High-speed directly modulated and uncooled long-wavelength DFB semiconductor lasers

摘要

This paper summarizes the recent advances and results of uncooled, high-speed directly modulated long-wavelength DFB laser diodes. It discusses ways of obtaining high temperature operation of laser diodes. By assessing the effect of carrier transport, doping and strain in active region, as well as the non-active region factor, such as laser waveguide properties and microwave parasitic parameters, various methods are discussed to improve the direct modulation bandwidth.