Design and implementation of multi-octave low-noise power amplifier (LNPA) using HIFET configuration

摘要

This paper reports an low-noise-power amplifier (LNPA) MMIC using HIFET (High-Voltage, High-Impedance FET) configuration with very broadband performance in terms of noise figure, output power and linearity. Based on 0.15μm pHEMT technology, this MMIC delivers a gain of 12.5 ± 1dB, 1.5 ∼ 2.5 dB noise figure (NF), good impedance match with S11/S22 less than −10 dB, and over 15 dBm of output P