Enhanced single photon emission from carbon nanotube dopant states coupled to silicon microcavities

摘要

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperatureand as nanoscalelight sources for integrated photonic circuits on silicon. Here we show that integration of dopant states in carbon nanotubes(Fig. 1a)and silicon microcavities(Fig. 1b)can provide bright and high-purity single photon emitters on silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe enhancement of emission from the dopant states by a factor of~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, where~30% decreaseof emission lifetime is observed. Statistics of photons emitted from the cavity-coupled dopant states are investigated by photon correlation measurements, and high-purity single photon generation is observed(Fig. 1c). Excitation power depend-ence of photon emission statistics shows that the degree of photon an-tibunching can be kept high even when the excitation power increases, while single photon emission rate can be increased up to~1.7x107Hz.