Combined Infrared and Raman temperature measurements on device structures

摘要

Combined Infrared and micro-Raman techniques were applied to measure temperature rise in semiconductor device structures based on AlGaN/GaN HFETs. Results from both techniques were compared and temperature and spatial resolution issues were discussed. Finite-difference 3D modeling of temperature distributions was performed to aid the interpretation of the experimental data. In addition the versatility of the Raman method was demonstrated for a GaAs pHEMT device.