Parasitic effects limiting the performances of Ill-V electron devices for digital lightwave systems

摘要

The frequency dispersion of the output conductance, gd, is a major trap-relaled parasitic effect penalizing the digital operation of III-V FET/HEMT devices. It has been studied taking into account the digital lightwave system requirements. Modelling together with experimental results are reported in this communication. Then, a conclusion is drawn in terms of device technologies selection.