首页> 外文会议>American Society for Precision Engineering(ASPE) Annual Meeting; 20071014-19; Dallas,TX(US) >PINPOINT SYNTHESIS OF TUNGSTEN OXIDE NANOWIRES USING HEAT CONTROLLING LAYER
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PINPOINT SYNTHESIS OF TUNGSTEN OXIDE NANOWIRES USING HEAT CONTROLLING LAYER

机译:利用控温层定点合成钨纳米线

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摘要

We proposed a new pinpoint heating process that uses a heat controlling layer. We used tungsten materials for the HCL and controlled the heated area where tungsten oxide nanowires were synthesized. By controlling electric current flowing through the HCL, which had broad and narrow areas, only the narrow areas of the HCL were heated to obtain the nanowires. We used the HCL whose narrow area was 5 μm and synthesized nanowires in a 3 μm × 3 μm area. We showed that we can synthesize nanowires on many spots uniformly and simutneously using a HCL with three narrow areas.
机译:我们提出了一种使用热控制层的新型精确加热工艺。我们将钨材料用于HCL,并控制了合成氧化钨纳米线的加热区域。通过控制流过具有宽和窄区域的HCL的电流,仅加热HCL的窄区域以获得纳米线。我们使用的HCL的狭窄区域为5μm,并在3μm×3μm的区域内合成了纳米线。我们表明,使用具有三个狭窄区域的HCL,可以在许多点上均匀而同时地合成纳米线。

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