首页> 外文会议>American Society of Mechanical Engineers(ASME) Integrated Nanosystems Conference: Design, Synthesis, and Applications; 20050914-16; Berkeley,CA(US) >THEORETICAL COMPUTING OF NANOCONTACT RESISTANCE BETWEEN ATOMIC FORCE MICROSCOPE TIP AND GOLD NANOPARTICLES DURING NANOINDENTATION
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THEORETICAL COMPUTING OF NANOCONTACT RESISTANCE BETWEEN ATOMIC FORCE MICROSCOPE TIP AND GOLD NANOPARTICLES DURING NANOINDENTATION

机译:纳米压痕过程中原子力显微镜尖端与金纳米颗粒之间的纳米接触电阻的理论计算

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Electrical characterization of nanostructures is useful in electronic applications as conducting wires, field-effect transistors, and single-electron tunneling transistors. The present work deals with the theoretical modeling of nanocontact resistance developed due to nanoindentation of the AFM tip on the gold nanoparticle. Validity of Maxwell and Sharvin model is discussed. Since the Fermi wavelength of the electrons in gold is smaller (0.5 nm) as compared with the contact radius of the tip (~ 8-10 nm) hence Sharvin's approach is used to predict the nanocontact resistance. The radius of contact between the tip and nanoparticle is given by Hertz formula which combines the elastic properties of the tip and the sample using effective elastic modulus. Two different types of tip -silicon tip and silicon tip coated with aluminium - are considered for the analysis. The variation of contact radius with the tip radius for two types of tips at specified contact forces during nanoindentation is shown. The dependence of the contact resistance on the contact radius is shown for two tips and interpreted in the physical domain.
机译:纳米结构的电表征在电子应用中非常有用,例如导线,场效应晶体管和单电子隧穿晶体管。本工作涉及由于金纳米粒子上的AFM尖端的纳米压痕而形成的纳米接触电阻的理论模型。讨论了麦克斯韦和沙文模型的有效性。由于与尖端的接触半径(〜8-10 nm)相比,金中电子的费米波长较小(0.5 nm),因此使用沙尔文的方法来预测纳米接触电阻。尖端和纳米颗粒之间的接触半径由赫兹公式给出,该公式使用有效的弹性模量结合了尖端和样品的弹性特性。分析中考虑了两种不同类型的尖端-硅尖端和涂有铝的硅尖端。示出了在纳米压痕期间在指定的接触力下两种类型的尖端的接触半径随尖端半径的变化。接触电阻对接触半径的依赖关系在两个方面均已显示,并在物理领域进行了解释。

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