Study of Cross-linking Reactions in Negative-type Thick-film Resists

摘要

This paper describes a study of a cross-linking reaction model for chemically amplified negative-type thick-film resists. Profile simulation is a major technique used to acquire experimental indicators. For this reason, numerous reports address simulation techniques, and many studies have focused in particular on chemically amplified positive-type resists, due to their role as mainstream resist materials used in the production of ICs. However, virtually no research has been performed on the profile simulation of chemically amplified negative-type thick-film resists. We measured the cross-linking reaction of a chemically amplified negative-type thick-film resist and created a new cross-linking reaction model. Our study demonstrates that this new model is more effective for thick-film resists than conventional models.