Utilization of Spin-on and Reactive Ion Etch Critical Dimension Shrink with Double Patterning for 32 nm and Beyond Contact Level Interconnects

摘要

Spin-on chemical shrink, reactive ion etch [RIE] shrink and litho-etch-litho-etch [LELE] double patterning have been utilized to produce dense 90 nm pitch, 26 nm bottom CD contacts starting from 65 nm CD, 126 nm diagonal pitch as printed features. Demonstrated lithographic process window, post etch pattern fidelity, CD, and CD uniformity are all suitable to production. In addition, electrical test results shows a comparable defect a ratio vs. a no chemical shrink baseline.