Systematic investigation of the synthesis, characterization and switching mechanism of metal oxide nanoparticle resists

摘要

Metal oxide nanoparticle resists have recently emerged as next generation photoresist materials which exhibit promising performance for extreme ultraviolet lithography. In this present work, we are able to show our ability to synthesize and well characterize small uniform metal oxide nanoparticles, to present stability study of the nanoparticles in the resist solvent over time, to pattern ～20 nm features by electron beam lithography, and to provide an insight into the insolubilization mechanism of the resist system.