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High-aspect ratio zone plate fabrication for hard x-ray nanoimaging

机译:高纵横比波带片制造,用于硬X射线纳米成像

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We present our results in fabricating Fresnel zone plate optics for the NanoMAX beamline at the fourth-generation synchrotron radiation facility MAX IV, to be used in the energy range of 6-10 keV. The results and challenges of tungsten nanofabrication are discussed, and an alternative approach using metal-assisted chemical etching (MACE) of silicon is showcased. We successfully manufactured diffraction-limited zone plates in tungsten with 30 nm outermost zone width and an aspect ratio of 21:1. These optics were used for nanoimaging experiments at NanoMAX. However, we found it challenging to further improve resolution and diffraction efficiency using tungsten. High efficiency is desirable to fully utilize the advantage of increased coherence on the optics at MAX IV. Therefore, we started to investigate MACE of silicon for the nanofabrication of high-resolution and high-efficiency zone plates. The first type of structures we propose use the silicon directly as the phase-shifting material. We have achieved 6 μm deep dense vertical structures with 100 nm linewidth. The second type of optics use iridium as the phase material. The structures in the silicon substrate act as a mold for iridium coating via atomic layer deposition (ALD). A semi-dense pattern is used with line-to-space ratio of 1:3 for a so-called frequency-doubled zone plate. This way, it is possible to produce smaller structures with the tradeoff of the additional ALD step. We have fabricated 45 nm-wide and 3.6 μm-tall silicon/iridium structures.
机译:我们介绍了在第四代同步加速器辐射设施MAX IV上为NanoMAX光束线制造菲涅耳波带片光学器件的结果,该器件将用于6-10 keV的能量范围。讨论了钨纳米加工的结果和挑战,并展示了一种使用金属的硅化学辅助蚀刻(MACE)的替代方法。我们成功地在钨中制造了衍射极限波带片,其最外层带宽度为30 nm,长宽比为21:1。这些光学器件用于NanoMAX的纳米成像实验。但是,我们发现使用钨进一步提高分辨率和衍射效率具有挑战性。为了充分利用MAX IV上增加的光学相干优势,需要高效率。因此,我们开始研究用于高分辨率和高效波带片纳米制造的硅的MACE。我们建议的第一类结构直接将硅用作相移材料。我们已经获得了线宽100 nm的6μm深致密垂直结构。第二类光学器件使用铱作为相材料。硅基板中的结构充当通过原子层沉积(ALD)进行铱涂层的模具。对于所谓的倍频波带片,使用线密度比为1:3的半密集图案。这样,可以在附加ALD步骤的权衡下生产较小的结构。我们已经制造出45 nm宽和3.6μm高的硅/铱结构。

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