THE X-RAY RESPONSE OF SILICON DRIFT DETECTORS

摘要

A new discrete analytic calculation of the spectral response of silicon drift detectors for X-raysrnis developed and compared with measurements using monochromatic synchrotron radiation inrnthe 0.2 to 1.9 keV energy range in order to explain the observed background. The calculationsrnare in good agreement with the measurements for secondary electron charge cloud widths σ _(sec) ofrn(85±7) nm below and (128±10) nm above 1.83 keV. The main background contribution arisesrnfrom thermalized electrons escaping the active volume.