Department of Physics, School of Sciences, Gujarat University, Ahmedabad -380 009, India;
Department of Physics, School of Sciences, Gujarat University, Ahmedabad -380 009, India;
Department of Physics, School of Sciences, Gujarat University, Ahmedabad -380 009, India;
Departments of Physics, Faculty of Science, M.S.University of Baroda, Vadodara-390 002, India;
Departments of Physics, Faculty of Science, M.S.University of Baroda, Vadodara-390 002, India;
Bi-Sb; Crystal growth; triangular and triangular layer growth features; optical band-gap and electrical resistivity;
机译:Bi-Sb合金单晶的生长与热电性能研究
机译:Bi-Sb单晶合金的生长和传输性能
机译:Sbi3掺杂25%Bi2te3-75%Sb2te3和15%Bi2te 3 -85%Sb2te3单晶的电气和热电性能
机译:Bi:Sb合金的单晶生长
机译:改进的垂直布里奇曼法生长和表征三碘化铋单晶。
机译:固态晶体生长对成分(1-x)(Na1 / 2Bi1 / 2)TiO3-xSrTiO3单晶生长的影响
机译:Bi-sb合金单晶的生长
机译:电光单晶硅酸铋(Bi12siO20)熔体生长过程中重力相关缺陷形成的识别与控制