Comparative Experimental Study Between Tensile and Compressive Uniaxially Stressed nMuGFETs Under X-ray Radiation Focusing on Analog Behavior

摘要

This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel widths and lengths of the devices. The experimental results show that the intrinsic voltage gain and the unit voltage gain frequency for tensile stressed devices always present a higher immunity to the X-ray radiation (up to 50 Mrad).