MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their a

摘要

Abstract: We report on the fabrication and performance characteristics of (GaAs)$-3$//(AlAs)$-1$/ short-period superlattices (SPSs) quantum well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 ML of GaAs and AlAs, respectively. The (GaAs)$-m$//(AlAs)$-n$/ SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad area threshold current density, J$-th$/, for 500 $mu@m long lasers is 510 A cm$+$MIN@2$/. The 500 $mu@m-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19 to 60$DGR@C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer. !22