首页> 外文会议>Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI >Correlation of metallic contamination with gate disturb failure mechanism on EEPROM cell: data analysis and process robustness improvement for contamination free manufacturing
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Correlation of metallic contamination with gate disturb failure mechanism on EEPROM cell: data analysis and process robustness improvement for contamination free manufacturing

机译:EEPROM单元上金属污染与门极干扰失效机制的相关性:无污染制造的数据分析和工艺鲁棒性提高

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Due to device degradations, the metallic contamination is monitored in semiconductor manufacturing lines with analysis of the incoming products and in-line electrical characterization. Some intermittent gate disturb fallout was observed on flash memories,
机译:由于器件性能下降,因此会在半导体生产线中对金属污染进行监控,并对进来的产品进行分析并进行在线电特性分析。在闪存中观察到一些间歇性的门极干扰辐射,

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