High performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

摘要

A 4H-SiC SPAD with an off-mesa bonding pad operating at 280nm is presented in this paper, with a low dark count rate of 14kHz and 27kHz at single photon detection efficiency of 1.9% and 2.6%, respectively. The device has a low breakdown voltage of 117V and a low dark current of 17fA, 49fA and 147fA at 50%, 90%, and 95% of breakdown voltage, respectively. The quantum efficiency is measured to be 28% (32%) at 280nm (270nm) with a UV to visible rejection ratio > 1400 ( >1600).