Photoelectric properties of GaAs p-n-junction under illumination of intense laser radiation

摘要

Results of experimental investigation of photoelectric properties of GaAs p-n-junction illuminated by short laser pulses of 1.06 μm wavelength are presented. The influence of laser radiation intensity and external bias voltage on the formation of photoresponse voltage has been studied. Free carrier heating was recognized to influence significantly the magnitude of the measured photovoltage. Possibility to improve the conversion efficiency of solar cells is discussed.