DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
DSA Research Department, EUVL Infrastructure Development Center, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan;
directed self-assembly; high-chi BCP; line-and-space pattern; pattern transfer; DSA process integration; metal wire; electrical yield verification;
机译:通过酸扩散常数和/或可光分解的淬灭剂浓度,在使用极紫外光刻技术制造11 nm半间距线间距图形中,进行抗蚀剂图像质量控制
机译:通过Ga注入和反应离子刻蚀(RIE)优化3D图案以用于纳米压印光刻(NIL)印模制造
机译:通过贴花转移光刻和反应性离子束蚀刻在电子材料上的聚二甲基硅氧烷抗蚀剂的微米和亚微米图案化:在高迁移率薄膜晶体管的制造中的应用
机译:使用定向自组装光刻的半场间距Sub.1-0-NM线路和空间图案制造的反应离子蚀刻挑战
机译:使用纳米球面光刻和RIE刻蚀制造二维纳米结构阵列及其在光学器件中的应用。
机译:用于胶体光刻和后刻蚀的表面增强红外吸收光谱的可调谐纳米天线
机译:用电子束光刻制造线路图案的制造特性和辊模上的点图案