Special Memory Mechanisms in SOI Devices

摘要

Several types of floating-body capacitorless IT-DRAM memory cells with planar SOI or multi-gate configuration are reviewed and compared. We show that 1T-DRAMs are also compatible with the 'unified memory' paradigm which aims at combining, within a single SOI transistor, volatile, nonvolatile and multiple-state memory functionalities. We focus on our recently proposed concepts (MSDRAM, A2RAM and Z~2-FET), by addressing the device architecture and fabrication, operating mechanisms, and scaling issues. Experimental results together with numerical simulations indicate the directions for performance optimization.