Physical Insights on the Design of UTB Devices, Including FinFETs

摘要

Based on our recently published textbook on ultra-thin-body (UTB) CMOS devices (1), unique physics of the two prime candidates for revolutionary nanoscale CMOS (i.e., the quasi-planar FinFET and the planar fully depleted (FD) SOI MOSFET) is overviewed, offering insights on device designs, scalabilities, and performance potentials. Emphasis is placed on features of these UTB devices that are not yet recognized or fully appreciated, and implied simplifications of device design and processing are noted.