Magnetization Processes Study In The Implanted Garnet Films Using The Second-Harmonic Generation Effect

摘要

In the work, magnetization-induced second-harmonic generation (MSHG) effect has been applied to investigate the magnetization distribution changes, induced by ion implantation into the thin surface layer of the garnet film. The studies were performed on the (lll)-oriented epitaxial garnet film (YSmLuCa)_3(FeGa)_5O_(12) implanted with 1.5 × 10~(16) cm~(-2) dose of H_2~+ ions at 60 keV energy. The measurements of the MSHG effect were performed as a function of amplitude of perpendicular external magnetic field. The observed complex field dependences of the remagnetization processes for the implanted garnet film studied were described in the frame of a phenomenological model developed. The model of the MSHG effect allows to perform decomposition of measured dependences on separate contributions originating from magnetization components related to implanted and unimplanted film volumes.