Design and analysis of GaN FET-based resonant dc-dc converter

摘要

This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are analyzed and their improvement ideas are presented.