The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions

摘要

The variation of fundamental properties of silicon melts by adding boron into the melts have been studied. The surface tension decreases and the viscosity has a tendency to be decreased with boron addition. These property variations cause melt flow variations in a crucible. The temperature distribution near the growing interface varies during crystal pulling process with and without adding boron. The term V/G near the crystal growing interface decreases apparently with boron addition. The extended defects have been studied by chemical etching and an infrared microscope. The defect formation due to interstitial and the effect of boron will be discussed.