On the Properties of Divacancies in Si_(1-x)Ge_x

摘要

It has been shown that during the irradiation the V——2 and V_2Ge centers are formed and a 5560 cm~(-1) absorption band in as-irradiated Si_(1-x)Ge_x samples is the superposition of two bands corresponding to the absorption by the V_2~0 and V_2Ge centers. With the increase of germanium content the contribution of V_2Ge centers to the absorption band increases and at Ge concentration about 15 at.% absorption band corresponding to V_2~0 practically disappears. A thermostability of the V_2Ge centers is shown to be essentially higher than the one of the divacancy in silicon and increases with germanium content.