Lock-In IR-Thermography-A Novel Tool for Material and Device Characterization

摘要

A novel non-destructive and non-contacting technique for the spatially resolved detection of small leakage currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leakage current induced temperature variations down to 10 μK at a lateral resolution down to 5 μm. Leakage currents of about 1 mA can be localized within seconds and some μA may be detected after less than 1 h measurement.