Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Beijing Microelectronic Technology Institute, Beijing 100076, China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China;
Cd1-xZnxTe film; RF sputtering; deposition temperature;
机译:从CDTE / ZNTE / CDTE多叠层生长的CD1-XZNXTE薄膜的空气退火生长和表征
机译:锌组成对Cd1-xZnxTe三元合金薄膜形成的影响
机译:GaSb和GaAs(001)取向基板上原子层沉积生长的Cd1-xZnxTe(0≤x≤1)纳米层的表征
机译:R.F.spttering种植的CD1-XZNXTE合金薄膜
机译:在硅薄膜上生长的弛豫低位错硅锗化物合金的生长和表征。
机译:通过生长的空气-水界面定向的超薄方石英薄膜边缘防止商业合金腐蚀
机译:R.F.Spttering沉积多晶ZnO膜表面上氧气的吸附和解吸
机译:垂直Bridgman生长Cd1-xZnxTe锭中锌的分布,电阻率和光敏性