首页> 外文会议>8th European Magnetic Materials and Applications Conference, Jun 7-10, 2000, Kyiv, Ukraine >The Influence of Localized Electronic States on the Optical and Magneto-Optical Properties and Magnetoresistance in Amorphous CoFeNiSiB Alloys
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The Influence of Localized Electronic States on the Optical and Magneto-Optical Properties and Magnetoresistance in Amorphous CoFeNiSiB Alloys

机译:局域电子态对非晶态CoFeNiSiB合金光学和磁光性能及磁阻的影响

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摘要

The optical and magneto-optical properties of amorphous CoFeSiB ribbons were investigated for incident photons in the energy range from 0.05 to 2.2 eV. The Kerr rotation spectra for the amorphous films have a shape in the 0.6 - 2.2 eV region that is quite similar to that of bulk Co. The optical conductivity of the amorphous CoFe(Ni)SiB alloys increases slowly as a function of frequency (proportional toω~(1/3)) in the IR. Such aσ~ω~(1/3) dependence in the IR suggests an additional localization of the electron states. A large room-temperature magnetoresistance effect has been demonstrated in thin Co_(71)Fe_7Si_(12)B_(10) and Co_(59)Fe_5Ni_(10)Si_(11)B_(15) amorphous ribbons for alternating current at applied fields, H<80 Oe.
机译:研究了非晶CoFeSiB带的光学和磁光特性,其入射光子的能量范围为0.05至2.2 eV。非晶薄膜的Kerr旋转光谱在0.6-2.2 eV范围内具有与块状Co十分相似的形状。非晶CoFe(Ni)SiB合金的光导率随频率缓慢增加(与ω成正比)约(1/3))。 IR中的这种α〜ω〜(1/3)依赖性表明电子态的附加局部化。在薄Co_(71)Fe_7Si_(12)B_(10)和Co_(59)Fe_5Ni_(10)Si_(11)B_(15)非晶薄带中已证明在室温下产生较大的室温磁阻效应, H <80 Oe。

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