Preparation and optical characterisation of silicon nitride and aluminium nitride films for silicon solar cell antlreflective coating application

摘要

Both Silicon and Aluminium Nitrides were prepared by means of reactive sputtering deposition using high density remote plasma configuration system. Films were deposited on 1Ωcm <100> p-type textured silicon wafers. Sputtering was carried out from high purity aluminium and silicon targets in argon and nitrogen atmosphere. Influence of deposition parameters on optical film properties has been investigated by spectroscopic ellipsometry. Both films were deposited with low values of k, also films with n values close to stoichiometric figures were measured. The data was then compared with photo conductance decay minority carrier lifetime measurements to find optimal deposition conditions for silicon solar cell applications.