首页> 外文会议>The 6th International Meeting on Information Display and the 5th International Display Manufacturing Conference (IMID/IDMC 2006) >Advanced Permeation Properties of Solvent-free Multi-LayerEncapsulation of thin films on Ethylene Terephthalate(PET)
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Advanced Permeation Properties of Solvent-free Multi-LayerEncapsulation of thin films on Ethylene Terephthalate(PET)

机译:对苯二甲酸乙二醇酯(PET)上薄膜的无溶剂多层封装的先进渗透性能

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摘要

In this paper, the inorganic multi-layerrnencapsulation of thin film was newly adopted tornprotect the organic layer from moisture and oxygen.rnUsing the electron beam, Sputter, inorganic multilayerrnthin-film encapsulation was deposited onto thernEthylene Terephthalate(PET) and their interfacernproperties between inorganic and organic layer wererninvestigated. In this investigation, the SiON SiO2 andrnparylene layer showed the most suitable properties.rnUnder these conditions, the water vapor transmissionrnrate (WVTR) for PET can be reduced from level ofrn0.57 g/m2/day (bare substrate) to 1*10-5 g/m2/dayrnafter application of a SiON and SiO2 layer. Thesernresults indicate that the PET/SiO2/SiON/Parylenernbarrier coatings have high potential for flexiblernorganic light-emitting diode(OLED) applications.
机译:本文采用新型的无机多层薄膜封装技术来保护有机层不受湿气和氧气的影响。利用电子束溅射法将无机多层薄膜封装膜沉积在对苯二甲酸乙二醇酯(PET)上,并研究了它们之间的界面性质。对有机层进行了调查。在这项研究中,SiON和二萘嵌苯层表现出最合适的性能。在这些条件下,PET的水蒸气透过率(WVTR)可以从0.57 g / m2 / day(裸基材)的水平降低到1 * 10-涂覆SiON和SiO2层后5g / m2 /天。这些结果表明,PET / SiO2 / SiON / Parylene阻隔涂层对于柔性有机发光二极管(OLED)应用具有很高的潜力。

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  • 来源
  • 会议地点 Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR)
  • 作者单位

    Department of Electrical and Electronics Engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120 - 749,Korea;

    Department of Electrical and Electronics Engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120 - 749,Korea;

    Department of Electrical and Electronics Engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120 - 749,Korea;

    Department of Electrical and Electronics Engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120 - 749,Korea;

    Department of Electrical and Electronics Engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120 - 749,Korea;

    NANO mechatronics Research Center,Korea Electronics Technology Institute,68 atap-dong,Bundang-gu,Seongnam-si,Gyeonggi-do 463-816,Korea;

    NANO mechatronics Research Center,Korea Elect;

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  • 正文语种 eng
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