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An extended multi-access memory system for SIMD architecture

机译:用于SIMD架构的扩展多存取存储器系统

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摘要

In order to satisfy the performance improvement of computing speed, many researchers have been studying in areas of both processor and memory system architectures. In the area of memory system, the linear skewing scheme has been known as a suitable one for the single instrution multiple data stream (SIMD) architecture. The scheme maps the data element located at coordinates (i, j) in an M ×N data array to memory modules (ai + bj)%m, where a and b are constants and can access data elements within a block, a row, or a column subarray simultaneously without conflicts if the number of memory modules is a prime number greater than the number of data elements of within the subarray. Although these functionalities of the linear skewing scheme, it needs more memory cells than M × N data array an application uses. In this paper, a memory system is proposed to make sufficient use of unused memory cells as a local memory system for processing elements in SIMD architecture.
机译:为了满足计算速度的性能改进,许多研究人员已经在处理器和存储器系统体系结构领域进行了研究。在存储系统领域,线性倾斜方案已被认为是一种适用于单指令多数据流(SIMD)体系结构的方案。该方案将位于M×N数据数组中位于坐标(i,j)的数据元素映射到内存模块(ai + bj)%m,其中a和b是常量,可以访问块,行,如果存储模块的数量是质数大于子数组内数据元素的数量,则列数组同时或无冲突。尽管线性倾斜方案具有这些功能,但与应用程序使用的M×N数据阵列相比,它需要更多的存储单元。在本文中,提出了一种存储系统以充分利用未使用的存储单元作为本地存储系统来处理SIMD体系结构中的元素。

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