首页> 外文会议>2019年第66回応用物理学会春季学術講演会講演予稿集 >Preparation of Relaxor Ferroelectric Polymer Langmuir-Blodgett Films Assisted by Polymer Nanosheets
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Preparation of Relaxor Ferroelectric Polymer Langmuir-Blodgett Films Assisted by Polymer Nanosheets

机译:聚合物纳米片辅助制备弛豫铁电聚合物Langmuir-Blodgett薄膜

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Polymer relaxor ferroelectric (RFE) behavior such as narrow hysteresis loop with low remnant polarization andhigh saturation electric field has attracted a great deal of attention for their excellent application potentials inhigh energy storage.1 Poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)](Fig. 1A) is a typical relaxor ferroelectric polymer, in which the third unit CTFE with large size and low dipolemoment is incorporated as defects to physically confine the ferroelectric domain size into nanoscale to achieveRFE structures. In terms of physical pinning force, the Langmuir-Blodgett (LB) technique has been used forpreparation of PVDF nanofilms with tunable thickness assisted by amphiphilic poly(N-dodecylacrylamide)(pDDA) nanosheets (Fig. 1A).2 Moreover, since pDDA barely has polarity, the physical confinement forinterlayers as well as adjacent PVDF nanodomains is expected. Herein, preparation of P(VDF-TrFE-CTFE) LBnanofilms with the aid of pDDA nanosheets will be introduced.
机译:聚合物弛豫铁电(RFE)行为,例如具有低残留极化的窄磁滞回线和 高饱和电场的优异的应用潜力引起了广泛的关注。 高能量存储。1聚偏二氟乙烯-三氟乙烯-氯三氟乙烯[P(VDF-TrFE-CTFE)] (图1A)是典型的弛豫铁电聚合物,其中第三单元CTFE具有大尺寸和低偶极子 弯矩作为缺陷被并入,从而将铁电畴的尺寸物理地限制在纳米级以实现 RFE结构。就物理钉扎力而言,Langmuir-Blodgett(LB)技术已用于 两亲性聚(N-十二烷基丙烯酰胺)辅助制备厚度可调的PVDF纳米膜 (pDDA)纳米片(图1A)。2此外,由于pDDA几乎没有极性,因此物理限制 期望中间层以及相邻的PVDF纳米域。在此,制备P(VDF-TrFE-CTFE)LB 将介绍借助pDDA纳米片形成的纳米薄膜。

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