Quantum-Confined Direct-Gap Optical Absorption in Strained GeSn/Ge Multiple-Quantum-Well on Silicon

摘要

Narrow-bandgap GeSn material system has emerged as a promising platform for efficient Si-basedinfrared photodetectors (PDs) for a wide range of applications . The realization of high-quality, highSn-content GeSn alloys using low-temperature growth techniques has led to the development ofGeSn-based PDs with extended photodetection range . Here we present a study of the growth and opticalcharacterization of GeSn/Ge multiple-quantum-well (MQW) structures on silicon for efficient PDs onsilicon.