On Impurity Diffusion in β-Ti

摘要

The impurity diffusion data in β-Ti are reanalysed using the assumption that vacancy migration enthalpy H_(1v)~M as well as vacancy formation enthalpy H_(1v)~F depend on temperature. A simple linear temperature dependence in form of H(T) =H(T_0)+αk(T-T_0) is used. The results of the analysis show that the impurity diffusion energy Q_2 linearly increases with α_2, i.e. Q_2(T_m) ≈ Q_0(T_m) +8 (α_2-α_0), with Q in kJ/mole. Q_0 and α_0 describe the self-diffusion.