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Impact of Thermal History on Gap Filling Capability of Die Attach Film

机译:热历史对贴片膜间隙填充能力的影响

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摘要

Die attach film(DAF) has being widely applied to various high density packages due to its bleedless,rnconsistent bond line thickness and simple operation without dispensing even skip cure post attachment comparedrnwith traditional liquid-type die attach material . However, void always is one of major concerns, especially for DAFrnapplied between die and substrate in plastic ball grid array packages. In this paper, the thermal history of DAF forrnencapsulated units is analyzed since it is put into assembly and the experiment is designed with different thermalrnhistory to illuminate its impact on void performance. Simultaneously void formation mechanism also is studied byrntracking void status during the whole assembling process. As the result, it was shown that the void issue is caused byrninsufficient gap filling and thermal history play an important role in gap filling capability. Based on thermal historyrnanalysis, heating at wire bond process is a key step due to its long staging time and high temperature. DAF withrnshort thermal history has super gap filling capability. Even voidless result can be achieved if skipping heating atrnwire bonding compared with about 10% void percentage for encapsulated samples under normal building condition.rnIt can be explained that cross-link occurs under thermal condition and gap on the substrate can not filled completelyrnbecause it became rigid. Scenarios for void reduction also are addressed based on this investigation in this paper.
机译:芯片附着膜(DAF)与传统的液体型芯片附着材料相比,由于其无渗点,一致的键合线厚度和简单的操作而无需分配甚至跳过固化后附着,已被广泛应用于各种高密度封装。然而,空洞始终是主要关注的问题之一,尤其是对于塑料球栅阵列封装中管芯和基板之间施加的DAFrn。本文分析了DAF封装单元组装后的热历史,并设计了具有不同热历史的实验,以阐明其对空隙性能的影响。同时通过在整个组装过程中追踪空隙状态来研究空隙形成机理。结果表明,空隙问题是由不足的间隙填充引起的,并且热历史在间隙填充能力中起重要作用。根据热历史分析,由于键合过程较长且温度较高,因此在引线键合过程中加热是关键步骤。热历史短的DAF具有超强的填充能力。如果跳过加热线键合,与之相比,在正常的建筑条件下封装样品的空隙率大约为10%,则甚至可以实现无空隙的结果。可以解释,交联是在热条件下发生的,并且基板上的间隙不能完全填充,因为它变得坚硬。基于本文的调查,还提出了减少空隙的方案。

著录项

  • 来源
  • 会议地点 San Jose CA(US);San Jose CA(US)
  • 作者单位

    Freescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385 Tel: 86-22-85686121 Fax: 86-22-85686555 E-mail: Y.Q.Su@freescale.com;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

    rnFreescale Semiconductor (China) Inc. No.15, Xinghua Avenue, Xiqing Economic Develop Area Tianjin, China 300385;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

    DAF; void; thermal; history; and gap filling;

    机译:DAF;无效;热;历史;和间隙填充;

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